Potential gain in photocurrent generation for Cu(In,Ga) Se2 solar cells by using In2O3 as a transparent conductive oxide layer

被引：20

作者：

Keller, Jan ^{[1
]}

Lindahl, Johan ^{[1
]}

Edoff, Marika ^{[1
]}

Stolt, Lars ^{[1
,2
]}

Torndahl, Tobias ^{[1
]}

机构：

[1] Uppsala Univ, Solid State Elect, Angstrom Lab, SE-75121 Uppsala, Sweden

[2] Solibro Res AB, Vallvagen 5, SE-75151 Uppsala, Sweden

来源：

PROGRESS IN PHOTOVOLTAICS | 2016年 / 24卷 / 01期

关键词：

In2O3; ALD; Zn-Sn-O; alternative window layer; CIGSe; TCO; THIN-FILMS; POSTDEPOSITION TREATMENT; BUFFER LAYERS; WORK FUNCTION; EFFICIENCY;

D O I：

10.1002/pip.2655

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This study highlights the potential of atomic layer deposited In2O3 as a highly transparent and conductive oxide (TCO) layer in Cu(In,Ga)Se-2 (CIGSe) solar cells. It is shown that the efficiency of solar cells which use Zn-Sn-O (ZTO) as an alternative buffer layer can be increased by employing In2O3 as a TCO because of a reduction of the parasitic absorption in the window layer structure, resulting in 1.7 mA/cm(2) gain in short circuit current density (J(sc)). In contrast, a degradation of device properties is observed if the In2O3 TCO is combined with the conventional CdS buffer layer. The estimated improvement for large-scale modules is discussed. Copyright (C) 2015 John Wiley & Sons, Ltd.

引用

页码：102 / 107

页数：6

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