Demonstration of the p-NiOX/n-Ga2O3 Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2

被引：121

作者：

Wang, Chenlu ^{[1
]}

Gong, Hehe ^{[2
]}

Lei, Weina ^{[1
]}

Cai, Yuncong ^{[1
]}

Hu, Zhuangzhuang ^{[1
]}

Xu, Shengrui ^{[1
]}

Liu, Zhihong ^{[1
]}

Feng, Qian ^{[1
]}

Zhou, Hong ^{[1
]}

Ye, Jiandong ^{[2
]}

Zhang, Jincheng ^{[1
]}

Zhang, Rong ^{[2
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

[2] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2021年 / 42卷 / 04期

关键词：

Ga2O3; NiOX; PN junction; heterojunction; junction FET; power figure of merit; LATERAL BETA-GA2O3 MOSFETS; SCHOTTKY-BARRIER DIODES; HIGH-PERFORMANCE; POWER FIGURE;

D O I：

10.1109/LED.2021.3062851

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on achieving high-performance beta-Ga2O3 power devices through the incorporation of the p-type NiOX .beta-Ga2O3 p-n heterojunction (HJ) diodes, as well as the novel p-n HJ gate (G) field-effect-transistors (HJ-FETs), have all demonstrated state-of-the-art Baliga's power figure of merit (P-FOM). The HJ p-n diode is introduced to provide a large built-in potential and alleviate the peak electric field to enhance the By. The non-field plated p-n HJ diode and HJ-FET acquire a breakdown voltage (BV)/specific on-resistance (R-on,R-sp) of 1220 V/1.08 m Omega . cm(2) and 1115 V/3.19 m Omega . cm(2), respectively. Therefore, the P-FOM which is defined as the BV2 /R on , sp is yielded to be 1.38 GW/cm(2) and 0.39 GW/cm(2) for p-n HJ diode and HJ-FET, respectively. Due to the hard realization of p-type Ga2O3, these findings show significant insights on the development of Ga2O3 power devices and offer great promises of implementing p-NiOx in boosting the Ga2O3 power device performances.

引用

页码：485 / 488

页数：4

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