Dramatic electron paramagnetic resonance change in compensated Ge:As at the metal-insulator transition

被引：0

作者：

Veinger, AI ^{[1
]}

Zabrodskii, AG ^{[1
]}

Tisnek, TV ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

PHYSICA B | 2000年 / 284卷

基金：

俄罗斯基础研究基金会;

关键词：

electronic transport; EPR; semiconductors;

D O I：

10.1016/S0921-4526(99)02843-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Dramatic behavior of electron paramagnetic resonance (EPR) has been found at the metal-insulator transition (MI) in compensated Ge:As. EPR spectrum of the metallic samples is characterized by Dysonian line shape with the width increasing with the compensation. In the insulating samples the line is split into two when the temperature is lower than 4.1 K. The nature of the observed phenomenon is discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：1671 / 1672

页数：2