Current-induced voltage noise below the Kosterlitz-Thouless transition

被引：4

作者：

Kokubo, N ^{[1
]}

Mutou, M ^{[1
]}

Kamada, M ^{[1
]}

Okuma, S ^{[1
]}

机构：

[1] Tokyo Inst Technol, Res Ctr Very Low Temp Syst, Meguro Ku, Tokyo 1528551, Japan

来源：

PHYSICA B | 2000年 / 284卷

关键词：

amorphous MoxSi1-x films; Kosterlitz-Thouless-Berezinski transition; noise;

D O I：

10.1016/S0921-4526(99)02313-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have measured the current-voltage (I-V) characteristics and voltage-noise spectral density S-V(f) for very thin amorphous MoxSi1-x films far below the Kosterlitz-Thouless transition temperature. The large 1/f-like noise is observed over broad frequencies f in a current range where the I-V curve shows a strong nonlinearity. The noise spectra, S-V(f)/V (divided by V), for different I show a trend to collapse onto a single line of 1/f(beta) (beta approximate to 0.75) at high f: The characteristic frequency f(C) below which S-V(f)/V deviates downward from the 1/f(beta) line increases rapidly with increasing I. The observed noise cannot be explained by the simple shot noise model of vortices. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：981 / 982

页数：2

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