Au-Al solid phase diffusion flip chip bonding

被引:0
|
作者
Mori, M
Kizaki, Y
Saito, M
机构
来源
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS | 1997年 / 80卷 / 04期
关键词
flip chip device; COG device; solid phase diffusion bonding; Au-Al bonding;
D O I
10.1002/(SICI)1520-6432(199704)80:4<44::AID-ECJB6>3.0.CO;2-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new flip chip bonding technique using An-Al solid phase bonding was developed. In this technique layer of Au and Al is formed by connecting a driver IC with au bumps to an Al wiring board. In the conventional flip chip mounting method, the solder bumps formed on the LSI electrode are connected to the board by the reflow method. This method is difficult to apply to metal with weak solder wettability such as Al wiring. Furthermore, the reflow method is difficult to apply to electronic equipment constructed with material that has low heat resistance such as liquid crystal display (LCD) modules. Therefore, assuming the application to LCD panels with Al wiring, an investigation of connection conditions, analysis of heat transmission, and identification of the Au-Al intermetallic compounds were performed. The results show that connection is mechanically and electronically stable, the LCD panel is not affected by the connection conditions such as temperature, the intermetallic compounds are Au5Al2 and Au4Al, and the final product is Au4Al. Furthermore, an LCD module was fabricated by bonding a driver IC with 80 mu m connection pitch to an LCD panel using Au-Al solid phase diffusion bonding. (C) 1997 Scripta Technica, Inc.
引用
收藏
页码:44 / 52
页数:9
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