Frequency multiplier measurements on heterostructure barrier varactors on a copper substrate

被引：23

作者：

Dillner, L ^{[1
]}

Strupinski, W

Hollung, S

Mann, C

Stake, J

Beardsley, M

Kollberg, E

机构：

[1] Chalmers, Microwave Elect Lab, S-41296 Gothenburg, Sweden

[2] Inst Elect Mat Technol, Epitaxy Dept, Warsaw, Poland

[3] Rutherford Appleton Lab, Chilton, England

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 05期

关键词：

frequency multiplier; heterostructure barrier varactor;

D O I：

10.1109/55.841297

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We hare fabricated heterostructure barrier varactors (HBV) on a copper substrate, which offers reduced spreading resistance, and improved thermal conductivity compared to an LnP substrate. The devices are fabricated without degrading the electrical characteristics. The three-barrier HBV material grown by MOVPE has a leakage current of only 0.1 mu A/mu m(2) at 19 (V) under bar, The maximum capacitance is 0.54 fF/mu m(2). In It frequency tripler experiment a maximum output power of 7.1 mW was generated at 221 GHz with a flange-to-flange efficiency of 7.9%.

引用

页码：206 / 208

页数：3

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