Reduced power consumption in GaAs-based bipolar cascade lasers

被引：5

作者：

Siskaninetz, WJ ^{[1
]}

Ehret, JE

Dang, TN

Van Nostrand, JE

Lott, JA

Nelson, TR

机构：

[1] USAF, Res Lab, Wright Patterson AFB, OH 45433 USA

[2] USAF, Res Lab, Mat Mfg Directorate, Wright Patterson AFB, OH 45433 USA

[3] USAF, Res Lab, Dept Elect & Comp Engn, Wright Patterson AFB, OH 45433 USA

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 21期

关键词：

D O I：

10.1049/el:20020857

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A systematic study of GaAs tunnel junctions for use in bipolar cascade laser diodes was performed. The current voltage characteristics of individual degenerately doped n(+) and p(+) regions grown by MBE were investigated and the most promising designs were placed within the individual laser substructures. This resulted in a I V reduction in operating voltage, as verified by comparing the lasing characteristics of several edge-emitting laser devices.

引用

页码：1259 / 1261

页数：3

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