The effects of He implantation on the thermal stability of Cu-Al precipitates in aluminum

被引：3
作者：
Feldmann, G
Fichtner, PFP
Zawislak, FC
机构：
[1] Univ Fed Rio Grande do Sul, Dept Met, BR-91501970 Porto Alegre, RS, Brazil
[2] Univ Fed Rio Grande do Sul, Pos Graduacao Ciencia Mat, BR-91501970 Porto Alegre, RS, Brazil
[3] Univ Fed Rio Grande do Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2000年 / 161卷
关键词：
He bubbles; ion implantation; Cu-Al precipitates; inhomogeneous Ostwald ripening;
D O I：
10.1016/S0168-583X(99)00754-5
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
In this contribution we report on the effects of He on the formation and thermal evolution of Cu-Al precipitates produced after Cu+ and He+ ion implantation in pure Al foils, The profiles of Cu and He were measured via Rutherford Backscattering (RBS) and Elastic Recoil Detection Analysis (ERDA) techniques, respectively, and the precipitate and bubble morphology were investigated by TEM. After thermal annealing, we observe a retardation of the Cu-Al precipitates coarsening and a Cu redistribution governed by the presence of He bubbles. Our results are discussed in terms of an overpressurized bubble system, which reduces the local vacancy concentration and affects the diffusional process, (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1075 / 1079
页数：5
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