Nucleation dynamics of single crystal WS2 from droplet precursors uncovered by in-situ monitoring

被引:11
作者
Li, Chao [1 ]
Kameyama, Tomoya [1 ]
Takahashi, Tomoyuki [1 ]
Kaneko, Toshiro [1 ]
Kato, Toshiaki [1 ,2 ]
机构
[1] Tohoku Univ, Dept Elect Engn, Sendai, Miyagi 9808579, Japan
[2] Tohoku Univ, JST PRESTO, Sendai, Miyagi 9808579, Japan
关键词
CHEMICAL-VAPOR-DEPOSITION; MONOLAYER MOS2; LIQUID-METAL; GROWTH; SAPPHIRE; ADATOMS;
D O I
10.1038/s41598-019-49113-0
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Transition metal dichalcogenides (TMDs) attract intence attention due to its unique optoelectrical features. Recent progress in production stage of TMD enables us to synthesis uniform and large area TMD with mono layer thickness. Elucidation of growth mechanism is a challenge to improve the crystallinity of TMD, which is regargeded as a next crutial subject in the production stage. Here we report novel diffusion and nucleation dynamics during tungsten disulphide (WS2) growth. The diffusion length (L-d) of the precursors have been measured with unique nucleation control methods. It was revealed that the L-d reaches up to similar to 750 mu m. This ultra-long diffusion can be attributed to precursor droplets observed during in-situ monitoring of WS2 growth. The integrated synthesis of >35,000 single crystals and monolayer WS2 was achieved at the wafer scale based on this model. Our findings are highly significant for both the fundamental study of droplet-mediated crystal growth and the industrial application of integrated single-crystal TMDs.
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页数:7
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