High performance miniaturized compact diplexer based on optimized integrated passive device fabrication technology

被引:7
|
作者
Yu, He [1 ]
Wang, Cong [1 ]
Qiang, Tian [2 ]
Meng, Fan-Yi [1 ]
机构
[1] Harbin Inst Technol, Sch Elect & Informat Engn, Harbin 150001, Heilongjiang, Peoples R China
[2] Jiangnan Univ, Sch Internet Things Engn, Wuxi 214122, Jiangsu, Peoples R China
基金
中国博士后科学基金;
关键词
Compact diplexer; Thin film integrated passive device; Lumped elements; Optimized fabrication technique; SPLIT-RING RESONATORS; BANDPASS-FILTERS; LTCC DIPLEXER; DESIGN;
D O I
10.1016/j.sse.2019.107628
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, we proposed a compact miniaturized diplexer using 650 mu m polished gallium arsenide (GaAs) substrate via thin film integrated passive device (TF-IPD) fabrication technology. The introduction of the three-order elliptic function diplexer can achieve low insertion loss and high isolation between the two outputs with a dimension of 1.9 mm x 0.8 mm x 0.2 mm (0.0053 lambda(0) x 0.0023 lambda(0) x 0.0005 lambda(0)). The optimized IPD techniques for spiral inductor and metal-insulator-metal capacitor (MIMCAP) are discussed to achieve high Q-factor and excellent stability of the fabricated devices. Notably, the compact GaAs-based diplexer exhibits high performance with insertion loss of 0.5 dB and return loss larger than 16 dB. Besides, the isolation level between the two output ports is higher than 30 dB, which ensures the two ports can work independently without interference from each other. This study provides a facile fabrication approach for global system for mobile communications (GSM) and wideband code division multiple access (WCDMA) wireless communication systems.
引用
收藏
页数:8
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