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First-principles calculations on the origins of the gap bowing in InAs1-xPx alloys
被引:11
作者:
Breidi, A.
[1
]
Amrani, B.
[2
]
Hassan, F. El Haj
[1
]
机构:
[1] Univ Libanaise, Fac Sci 1, Phys Mat Lab, Beirut, Lebanon
[2] Ctr Univ Mascara, Mascara 29000, Algeria
关键词:
FP-LAPW;
DFT;
Band structures;
Gap bowing;
Critical temperature;
GROUND-STATE PROPERTIES;
III-V SEMICONDUCTORS;
PHASE-TRANSITION;
SUPERLATTICES;
PRESSURE;
EXCHANGE;
DENSITY;
EPITAXY;
GROWTH;
D O I:
10.1016/j.physb.2009.05.029
中图分类号:
O469 [凝聚态物理学];
学科分类号:
070205 ;
摘要:
We perform self-consistent ab-initio calculations to study the structural, electronic and thermodynamic properties of InAs1-xPx alloy. The full potential-linearized augmented plane wave (FP-LAPW) method was employed within density functional theory (DFT). The ground-state properties are determined for the bulk materials (InAs and InP) as well as for the different concentration of their alloys. Deviations of the lattice constants from Vegard's law and the bulk modulus from linear concentration dependence (LCD) were observed. The microscopic origins of the gap bowing were explained by using the approach of Zunger and co-workers. The gap bowing for the alloy of interest was found to be mainly caused by the charge-exchange contributions. In addition, the thermodynamic stability of InAs1-xPx alloy was investigated by calculating the excess enthalpy of mixing Delta H-m and the calculated phase diagram showed a broad miscibility gap with a high critical temperature. (C) 2009 Elsevier BY. All rights reserved.
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页码:3435 / 3439
页数:5
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