Band structure of the effective-mass superlattice

被引：0

作者：

Klymenko, M. V. ^{[1
]}

Safonov, I. M. ^{[1
]}

Shulika, O. V. ^{[1
]}

Sukhoivanov, I. A. ^{[1
,2
]}

机构：

[1] Kharkov Natl Univ Radio Elect, Lab Phot, Lenin Av 14, UA-61166 Kharkov, Ukraine

[2] Univ Guanajuato, FIMME, Dept Electron, Guanajuato, Mexico

来源：

LFNM 2006: 8TH INTERNATIONAL CONFERENCE ON LASER AND FIBER-OPTICAL NETWORKS MODELING, PROCEEDINGS | 2006年

关键词：

superlattice; band offsets; band lineups; band structure; effective mass approximation;

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The new kind of semiconductor superlattice is proposed. It is based on the new type of semiconductor heterojunctions that have only carrier effective mass discontinuity and no or extremely small band lineups in both conduction and valence bands. Confinement effects in these structures are due to effective mass discontinuity only. It makes this kind of structures to be very sensitive to the boundary conditions for envelope functions. The continuity of the envelope function and its first derivative on the heteroboundary are inapplicable in this case. We estimate theoretically the band structure of this. superlattice within the framework of the effective mass approximation and boundary conditions that take in to account the distinction of the Bloch functions in contacting materials.

引用

页码：411 / +

页数：2