Magnetic and optical properties of epitaxial n-type Cu-doped ZnO thin films deposited on sapphire substrates

被引：23

作者：

Shukla, Gaurav ^{[1
]}

机构：

[1] Indian Inst Technol Guwahati, Dept Phys, Laser & Photon Lab, Gauhati 781039, India

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2009年 / 97卷 / 01期

关键词：

SEMICONDUCTORS; FERROMAGNETISM;

D O I：

10.1007/s00339-009-5311-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we report on pulsed laser deposition of n-type Cu-doped ZnO thin films on c-plane sapphire substrates at 700A degrees C. XRD and HRTEM were employed to study the epitaxial growth relationship between the Zn(1-x) Cu (x) O film and sapphire substrate. Absorption measurements showed excitonic nature of the thin films and a decrease in the bandgap energy with increased Cu concentration was observed. Such as-deposited films showed room temperature ferromagnetism with Curie temperature (T (c) ) at around 320 K. The moment per Cu atom decreases as the Cu concentration increases. The largest magnetic moment about 0.81 mu (B) /Cu atom was observed for Zn(0.95)Cu(0.05)O thin films. The presence of any magnetic second phase was ruled out and the ferromagnetism was attributed to Cu ions substituted directly into the ZnO lattice.

引用

页码：115 / 118

页数：4

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