The study of gate length AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor

被引：0

作者：

Bechlaghem, Fatima Zohra ^{[1
]}

Guen Bouazza, Ahlam ^{[1
]}

Bouazza, Benyounes ^{[1
]}

Bouchachia, Badia ^{[1
]}

机构：

[1] Univ Abou Bakr Belkaid, Fac Sci & Engn, Res Unit Mat & Renewable Energies, Tilimsen, Algeria

来源：

DIELECTRIC MATERIALS AND APPLICATIONS, ISYDMA '2016 | 2016年 / 1卷

关键词：

Component; Pseudomorphic HEMT; Silvaco; Gate Length Scaling;

D O I：

10.21741/2474-395X/1/9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper a detailed simulation study is presented, the device characteristics of AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs) with different gate lengths sheets are comprehensively and systematically investigated. Based on a two-dimensional simulator of Atlas, the detailed calculations and studies including, carrier distributions, and DC and microwave performances are reported. Due to the use of InGaAs DC structure, good pinch-off and saturation characteristics, higher current drivability, larger and linear transconductance correlation has been analyzed for prediction of the impact on device performances.

引用

页码：35 / +

页数：2

共 4 条

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