Enhanced ultraviolet emission of MgZnO/ZnO multiple quantum wells light-emitting diode by p-type MgZnO electron blocking layer

被引：17
作者：
Choi, Yong-Seok [1 ]
Kang, Jang-Won [1 ]
Kim, Byeong-Hyeok [2 ]
Park, Seong-Ju [1 ,2 ]
机构：
[1] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea
[2] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea
来源：
OPTICS EXPRESS | 2013年 / 21卷 / 25期
基金：
新加坡国家研究基金会;
关键词：
EFFICIENCY; FILMS; BLUE;
D O I：
10.1364/OE.21.031560
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report on the effect of a p-type MgZnO electron blocking layer (EBL) on the optical and electrical properties of MgZnO/ZnO multiple quantum wells (MQWs) light-emitting diodes (LEDs). The p-type Mg0.15Zn0.85O EBL was introduced between the MQWs and p-type Mg0.1Zn0.9O layers. The p-type Mg0.15Zn0.85O EBL increased the ultraviolet emission by 111.2% at 60 mA and decreased the broad deep-level emission from ZnO LEDs. The calculated band structures and carrier distribution in ZnO LEDs show that p-type Mg0.15Zn0.85O EBL effectively suppresses the electron overflow from MQWs to p-type Mg0.1Zn0.9O and increases the hole concentration in the MQWs. (C) 2013 Optical Society of America
引用
收藏
页码：31560 / 31566
页数：7
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