Improved Carrier Distributions by Varying Barrier Thickness for InGaN/GaN LEDs

被引：14
作者：
Yu, S. F. [1 ,2 ]
Lin, Ray-Ming [3 ,4 ]
Chang, S. J. [1 ,2 ]
Chen, J. R. [5 ]
Chu, J. Y. [5 ]
Kuo, C. T. [5 ]
Jiao, Z. Y. [6 ]
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Ctr Energy Technol & Strategy, Dept Elect Engn, Tainan 70101, Taiwan
[3] Chang Gung Univ, Grad Inst Elect Engn, Tao Yuan 333, Taiwan
[4] Chang Gung Univ, Green Technol Res Ctr, Tao Yuan 333, Taiwan
[5] Lextar Elect Corp, Technol R&D Div, Component Tech Platform Dept, Hsinchu 30075, Taiwan
[6] China Univ Petr East China, Coll Sci, Qingdao 266555, Shandong, Peoples R China
来源：
JOURNAL OF DISPLAY TECHNOLOGY | 2013年 / 9卷 / 04期
关键词：
Droop; InGaN; LEDs; narrow quantum barriers; LIGHT-EMITTING-DIODES;
D O I：
10.1109/JDT.2012.2205367
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we minimized efficiency droop by varying barrier thickness for InGaN/GaN multiple quantum wells (MWQs) featuring narrow quantum barriers (NQBs). The external quantum efficiency (EQE) for a light-emitting diode (LED) possessing NQBs improved by 18% at a current density of 200A . cm(-2), compared to that of a conventional LED incorporating a 12-nm-thick barrier. The enhanced carrier distribution resulting from the presence of NQBs was practically approved from another experimental design in this study. We suggest that the NQBs displayed uniform carrier distribution in active layer and decreased the carrier density in the active layer at a critical current density.
引用
收藏
页码：239 / 243
页数：5
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