Synthesis of In2O3 nanowires, nanobouquets and nanopins

被引：0
|
作者：
Ji, X. H. [1 ]
Zhai, J. W. [1 ]
机构：
[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
来源：
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1-3 | 2008年
关键词：
D O I：
10.1109/INEC.2008.4585508
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Semiconducting oxide In2O3 nanostructures were prepared by reduction of In2O3 powder at 650 degrees C through vapour-phase transport process. In2O3 nanowires, nanobouquets and nanopins were obtained. The obtained In2O3 nanostructures were characterized by the x-ray diffraction measurement, scanning electron microscopy, and transmission electron microscopy.
引用
收藏
页码：375 / 376
页数：2
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