On the Radiation Tolerance of SiGe HBT and CMOS-Based Phase Shifters for Space-Based, Phased-Array Antenna Systems

被引：5

作者：

Thrivikraman, Tushar K. ^{[1
]}

Cheng, Peng ^{[1
]}

Phillips, Stanley D. ^{[1
]}

Comeau, Jonathan P. ^{[1
]}

Morton, Matt A. ^{[1
]}

Cressler, John D. ^{[1
]}

Papapolymerou, John ^{[1
]}

Marshall, Paul W. ^{[2
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30308 USA

[2] NASA, Brookneal, VA 24528 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2008年 / 55卷 / 06期

关键词：

CMOS; phased-array; phase-shifters; radar; radiation response; silicon-germanium HBT; single-pole double throw switch;

D O I：

10.1109/TNS.2008.2006968

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first irradiation results on high-frequency SiGe HBT and CMOS phase shifters for space- based, phased-array antennas used in radar or wireless communication systems. Both phase shifter circuits remain functional with acceptable dc and RF performance up to multi-Mrad proton exposure, and are thus suitable for many orbital applications. In addition, simulation results probing the limits of phase shifter performance in a radiation environment are presented. These results show that both CMOS and SiGe HBT based phase shifters can be used for space-based applications without any specific radiation hardening techniques.

引用

页码：3246 / 3252

页数：7

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