On the Radiation Tolerance of SiGe HBT and CMOS-Based Phase Shifters for Space-Based, Phased-Array Antenna Systems

被引：5
|
作者：
Thrivikraman, Tushar K. [1 ]
Cheng, Peng [1 ]
Phillips, Stanley D. [1 ]
Comeau, Jonathan P. [1 ]
Morton, Matt A. [1 ]
Cressler, John D. [1 ]
Papapolymerou, John [1 ]
Marshall, Paul W. [2 ]
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30308 USA
[2] NASA, Brookneal, VA 24528 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2008年 / 55卷 / 06期
关键词：
CMOS; phased-array; phase-shifters; radar; radiation response; silicon-germanium HBT; single-pole double throw switch;
D O I：
10.1109/TNS.2008.2006968
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the first irradiation results on high-frequency SiGe HBT and CMOS phase shifters for space- based, phased-array antennas used in radar or wireless communication systems. Both phase shifter circuits remain functional with acceptable dc and RF performance up to multi-Mrad proton exposure, and are thus suitable for many orbital applications. In addition, simulation results probing the limits of phase shifter performance in a radiation environment are presented. These results show that both CMOS and SiGe HBT based phase shifters can be used for space-based applications without any specific radiation hardening techniques.
引用
收藏
页码：3246 / 3252
页数：7
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