In this paper, we report on the surface roughness evolution of highly ordered anodic aluminum oxide (AAO) films based on an atomic force microscopy (AFM) study. Root mean square of the surface roughness was measured on AFM images taken from highly ordered AAO films produced by two-step anodization under different conditions including electrolyte type, anodization voltage, and anodization time. Surface roughness of highly ordered AAO films increases step by step through the two-step anodizing process including electropolishing, first-step anodization, dissolution, and second-step anodization. However, increase of the surface roughness is proportional to the anodization voltage and time. The surface roughness of AAO films changes as a function of length scale until it finally approaches a maximum termed the saturation roughness. The variation of roughness of the growth of AAO could be scaled with an anomalous dynamic behavior as it saturates over a critical length scale while the saturation roughness is dependent on the anodizing time and voltage.
引用
收藏
页码:535 / 542
页数:8
相关论文
共 42 条
[21]
Microelectronic Engineering, 2012, MICROELECTRONIC ENG
机构:
Kogakuin Univ, Fac Engn, Dept Appl Chem, Shinjuku Ku, Tokyo 1638677, JapanKogakuin Univ, Fac Engn, Dept Appl Chem, Shinjuku Ku, Tokyo 1638677, Japan
Ono, S
;
Saito, M
论文数: 0引用数: 0
h-index: 0
机构:
Kogakuin Univ, Fac Engn, Dept Appl Chem, Shinjuku Ku, Tokyo 1638677, JapanKogakuin Univ, Fac Engn, Dept Appl Chem, Shinjuku Ku, Tokyo 1638677, Japan
Saito, M
;
Asoh, H
论文数: 0引用数: 0
h-index: 0
机构:
Kogakuin Univ, Fac Engn, Dept Appl Chem, Shinjuku Ku, Tokyo 1638677, JapanKogakuin Univ, Fac Engn, Dept Appl Chem, Shinjuku Ku, Tokyo 1638677, Japan
机构:
Kogakuin Univ, Fac Engn, Dept Appl Chem, Shinjuku Ku, Tokyo 1638677, JapanKogakuin Univ, Fac Engn, Dept Appl Chem, Shinjuku Ku, Tokyo 1638677, Japan
Ono, S
;
Saito, M
论文数: 0引用数: 0
h-index: 0
机构:
Kogakuin Univ, Fac Engn, Dept Appl Chem, Shinjuku Ku, Tokyo 1638677, JapanKogakuin Univ, Fac Engn, Dept Appl Chem, Shinjuku Ku, Tokyo 1638677, Japan
Saito, M
;
Asoh, H
论文数: 0引用数: 0
h-index: 0
机构:
Kogakuin Univ, Fac Engn, Dept Appl Chem, Shinjuku Ku, Tokyo 1638677, JapanKogakuin Univ, Fac Engn, Dept Appl Chem, Shinjuku Ku, Tokyo 1638677, Japan