Online Junction Temperature Measurement via Internal Gate Resistance during Turn-On

被引：0

作者：

Baker, Nick ^{[1
]}

Munk-Nielsen, Stig ^{[1
]}

Liserre, Marco ^{[1
]}

Iannuzzo, Francesco ^{[1
]}

机构：

[1] Aalborg Univ, Dept Energy Technol, DK-9220 Aalborg O, Denmark

来源：

2014 16TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'14-ECCE EUROPE) | 2014年

关键词：

IGBT; MOSFET; Reliability; Measurement; Semiconductor Devices; POWER; DEVICES;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A new method for junction temperature measurement of power semiconductor switches is presented. The measurement exploits the temperature dependent resistance of the temperature sensitive electrical parameter (TSEP): the internal gate resistance. This dependence can be observed during the normal switching transitions of an IGBT or MOSFET, and as a result the presented method uses the integral of the gate voltage during the turn-on delay. A measurement circuit can be integrated into a gate driver with no modification to converter or gate driver operation and holds significant advantages over other TSEP based measurement methods, primarily being: an absence of any dependence on operating conditions such as load current, and the potential to achieve higher sensitivity (20mV/C or more) than alternative TSEPs.

引用

页数：10

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