Direct Chemical Vapor Deposition of Large-Area Carbon Thin Films on Gallium Nitride for Transparent Electrodes: A First Attempt

被引：21

作者：

Sun, Jie ^{[1
]}

Cole, Matthew T. ^{[2
]}

Ahmad, S. Awais ^{[1
,3
]}

Backe, Olof ^{[4
]}

Ive, Tommy ^{[3
]}

Loffler, Markus ^{[4
]}

Lindvall, Niclas ^{[1
]}

Olsson, Eva ^{[4
]}

Teo, Kenneth B. K. ^{[5
]}

Liu, Johan ^{[6
]}

Larsson, Anders ^{[3
]}

Yurgens, August ^{[1
]}

Haglund, Asa ^{[3
]}

机构：

[1] Chalmers Univ Technol, Quantum Device Phys Lab, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

[2] Univ Cambridge, Elect Devices & Mat Grp, Dept Engn, Cambridge CB3 0BN, England

[3] Chalmers Univ Technol, Photon Lab, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

[4] Chalmers Univ Technol, Microscopy & Microanal Grp, Dept Appl Phys, S-41296 Gothenburg, Sweden

[5] AIXTRON Nanoinstruments Ltd, Cambridge CB24 4FQ, England

[6] Chalmers Univ Technol, BioNano Syst Lab, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 2012年 / 25卷 / 03期

关键词：

Chemical vapor deposition; GaN; graphene; transparent electrodes; OHMIC CONTACT; CRACK-FREE; SI;

D O I：

10.1109/TSM.2012.2198676

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Direct formation of large-area carbon thin films on gallium nitride by chemical vapor deposition without metallic catalysts is demonstrated. A high flow of ammonia is used to stabilize the surface of the GaN (0001)/sapphire substrate during the deposition at 950 degrees C. Various characterization methods verify that the synthesized thin films are largely sp(2) bonded, macroscopically uniform, and electrically conducting. The carbon thin films possess optical transparencies comparable to that of exfoliated graphene. This paper offers a viable route toward the use of carbon-based materials for future transparent electrodes in III-nitride optoelectronics, such as GaN-based light emitting diodes and laser diodes.

引用

页码：494 / 501

页数：8

共 34 条

[1]

Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/nnano.2010.132, 10.1038/NNANO.2010.132]

[2] An X-ray study of carbon black [J].

Biscoe, J ;

Warren, BE .

JOURNAL OF APPLIED PHYSICS, 1942, 13 (06) :364-371

[3]

Bonaccorso F, 2010, NAT PHOTONICS, V4, P611, DOI [10.1038/nphoton.2010.186, 10.1038/NPHOTON.2010.186]

[4] Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors [J].

Chichibu, Shigefusa F. ;

Uedono, Akira ;

Onuma, Takeyoshi ;

Haskell, Benjamin A. ;

Chakraborty, Arpan ;

Koyama, Takahiro ;

Fini, Paul T. ;

Keller, Stacia ;

Denbaars, Steven P. ;

Speck, James S. ;

Mishra, Umesh K. ;

Nakamura, Shuji ;

Yamaguchi, Shigeo ;

Kamiyama, Satoshi ;

Amano, Hiroshi ;

Akasaki, Isamu ;

Han, Jung ;

Sota, Takayuki .

NATURE MATERIALS, 2006, 5 (10) :810-816

[5] Very low resistance multilayer ohmic contact to n-GaN [J].

Fan, ZF ;

Mohammad, SN ;

Kim, W ;

Aktas, O ;

Botchkarev, AE ;

Morkoc, H .

APPLIED PHYSICS LETTERS, 1996, 68 (12) :1672-1674

[6] Interpretation of Raman spectra of disordered and amorphous carbon [J].

Ferrari, AC ;

Robertson, J .

PHYSICAL REVIEW B, 2000, 61 (20) :14095-14107

[7] EVAPORATED SN-DOPED IN2O3 FILMS - BASIC OPTICAL-PROPERTIES AND APPLICATIONS TO ENERGY-EFFICIENT WINDOWS [J].

HAMBERG, I ;

GRANQVIST, CG .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (11) :R123-R159

[8] Optical properties of CVD grown amorphous Ge-Sb-S thin films [J].

Huang, C. C. ;

Wu, C. C. ;

Knight, K. ;

Hewak, D. W. .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2010, 356 (4-5) :281-285

[9] Conductive and crack-free AlN/GaN:Si distributed Bragg reflectors grown on 6H-SiC(0001) [J].

Ive, T ;

Brandt, O ;

Ploog, KH .

JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) :355-360

[10] Crack-free and conductive Si-doped AlN/GaN distributed Bragg reflectors grown on 6H-SiC(0001) [J].

Ive, T ;

Brandt, O ;

Kostial, H ;

Hesjedal, T ;

Ramsteiner, M ;

Ploog, KH .

APPLIED PHYSICS LETTERS, 2004, 85 (11) :1970-1972

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