The important role of water in growth of monolayer transition metal dichalcogenides

被引:51
作者
Kastl, Christoph [1 ]
Chen, Christopher T. [1 ]
Kuykendall, Tevye [1 ]
Shevitski, Brian [1 ,2 ]
Darlington, Thomas P. [1 ,2 ]
Borys, Nicholas J. [1 ]
Krayev, Andrey [3 ]
Schuck, P. James [1 ]
Aloni, Shaul [1 ]
Schwartzberg, Adam M. [1 ]
机构
[1] Lawrence Berkeley Natl Lab, Mol Foundry, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[3] AIST NT, Novato, CA 94949 USA
关键词
transition metal dichalcogenides; chemical vapor deposition; atomic layer deposition; vapor transport; MOS2 ATOMIC LAYERS; SINGLE-LAYER; WAFER-SCALE; TUNGSTEN DISULFIDE; OPTICAL-PROPERTIES; VAPOR TRANSPORT; THIN-FILMS; MOLYBDENUM; VOLATILIZATION; WSE2;
D O I
10.1088/2053-1583/aa5f4d
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
2D transition metal dichalcogenides (TMDs) are commonly grown by chemical vapor deposition using transition metal oxides as solid precursors. Despite the widespread use of this technique, challenges in reproducibility, coverage, and material quality are pervasive, suggestive of unknown and uncontrolled process parameters. In this communication, we demonstrate the impact of water vapor on this growth process. Our results show a direct correlation between gas phase water content and the morphology of TMD films. In particular, we show that the presence of water enhances volatilization, and therefore the vapor transport of tungsten and molybdenum oxide. Surprisingly, we find that water not only plays an important role in volatilization but is also compatible with TMD growth. In fact, carefully controlled humidity can consistently produce high quality, luminescent materials.
引用
收藏
页数:10
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