Improvement of resistive switching in NiO-based nanowires by inserting Pt layers

被引：26

作者：

Huang, Yen-Chun ^{[1
]}

Chen, Po-Yuan ^{[2
]}

Chin, Tsung-Shune ^{[3
]}

Liu, Ru-Shi ^{[4
]}

Huang, Chao-Yuan ^{[5
]}

Lai, Chih-Huang ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

[2] Natl Taiwan Normal Univ, Inst Electroopt Sci & Technol, Taipei 116, Taiwan

[3] Feng Chia Univ, Dept Mat Sci & Engn, Taichung 40724, Taiwan

[4] Natl Taiwan Univ, Dept Chem, Taipei 106, Taiwan

[5] Natl Taiwan Normal Univ, Dept Phys, Taipei 116, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 15期

关键词：

TRANSITION-METAL OXIDES; NONVOLATILE MEMORY; ARRAYS; FILMS; NANOFILAMENTS; BEHAVIORS;

D O I：

10.1063/1.4758482

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonpolar resistive switching is demonstrated in polycrystalline NiO-based nanowires. The lower switching voltages and narrower switching distributions are exhibited in multilayered NiO/Pt nanowires, compared to the monolithic NiO nanowires. The temperature dependence of resistance at low resistance state reveals the conduction is attributed to the hopping through percolation paths composed of oxygen-related defects. The inserted Pt layers behave as intermediate electrodes to reduce migration length of oxygen ions and to store the oxygen ions near the electrodes. Therefore, the localized formation/migration of oxygen ions confines the occurrence of percolation paths, leading to improvement of the switching parameters. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4758482]

引用

页数：4

共 37 条

[1] Write current reduction in transition metal oxide based resistance-change memory [J].

Ahn, Seung-Eon ;

Lee, Myoung-Jae ;

Park, Youngsoo ;

Kang, Bo Soo ;

Lee, Chang Bum ;

Kim, Ki Hwan ;

Seo, Sunae ;

Suh, Dong-Seok ;

Kim, Dong-Chirl ;

Hur, Jihyun ;

Xianyu, Wenxu ;

Stefanovich, Genrikh ;

Yin, Hit. Axiang ;

Yoo, In-Kyeong ;

Lee, Atng-Hyun ;

Park, Jong-Bong ;

Baek, In-Gyu ;

Park, Bae Ho .

ADVANCED MATERIALS, 2008, 20 (05) :924-+

[2] Resistive Random Access Memory (ReRAM) Based on Metal Oxides [J].

Akinaga, Hiroyuki ;

Shima, Hisashi .

PROCEEDINGS OF THE IEEE, 2010, 98 (12) :2237-2251

[3] Resistive-Switching Crossbar Memory Based on Ni-NiO Core-Shell Nanowires [J].

Cagli, Carlo ;

Nardi, Federico ;

Harteneck, Bruce ;

Tan, Zhongkui ;

Zhang, Yuegang ;

Ielmini, Daniele .

SMALL, 2011, 7 (20) :2899-2905

[4] Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals [J].

Chang, Wen-Yuan ;

Cheng, Kai-Jung ;

Tsai, Jui-Ming ;

Chen, Hung-Jen ;

Chen, Frederick ;

Tsai, Ming-Jinn ;

Wu, Tai-Bor .

APPLIED PHYSICS LETTERS, 2009, 95 (04)

[5] Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications [J].

Chang, Wen-Yuan ;

Lai, Yen-Chao ;

Wu, Tai-Bor ;

Wang, Sea-Fue ;

Chen, Frederick ;

Tsai, Ming-Jinn .

APPLIED PHYSICS LETTERS, 2008, 92 (02)

[6]

Gao B., 2011, IEDM Technical Digest, P417, DOI [10.1109/IEDM.2011.6131573, DOI 10.1109/IEDM.2011.6131573]

[7] Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory [J].

Gao, Bin ;

Sun, Bing ;

Zhang, Haowei ;

Liu, Lifeng ;

Liu, Xiaoyan ;

Han, Ruqi ;

Kang, Jinfeng ;

Yu, Bin .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (12) :1326-1328

[8] On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt [J].

Guan, Weihua ;

Liu, Ming ;

Long, Shibing ;

Liu, Qi ;

Wang, Wei .

APPLIED PHYSICS LETTERS, 2008, 93 (22)

[9] On the Switching Parameter Variation of Metal-Oxide RRAM-Part I: Physical Modeling and Simulation Methodology [J].

Guan, Ximeng ;

Yu, Shimeng ;

Wong, H. -S. Philip .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (04) :1172-1182

[10] Bipolar resistive switching in individual Au-NiO-Au segmented nanowires [J].

Herderick, Edward D. ;

Reddy, Kongara M. ;

Sample, Rachel N. ;

Draskovic, Thomas I. ;

Padture, Nitin P. .

APPLIED PHYSICS LETTERS, 2009, 95 (20)

← 1 2 3 4 →