Oxide-Semiconductor-Based TFTs for Displays and Flexible Electronics

被引：3

作者：

Lin, Chang-Yu ^{[1
]}

Chien, Chih-Wei ^{[1
]}

Wu, Cheng-Han ^{[1
]}

Hsieh, Hsing-Hung ^{[1
]}

Wu, Chung-Chih ^{[1
]}

Yeh, Yung-Hui ^{[2
]}

Cheng, Chun-Cheng ^{[2
]}

Lai, Chih-Ming ^{[2
]}

Yu, Ming-Jiue ^{[2
]}

Leu, Chyi-Ming ^{[2
]}

Lee, Tzong-Ming ^{[2
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Dept Elect Engn, Grad Inst Photon & Optoelect, Taipei 106, Taiwan

[2] Ind Technol Res Inst, Hsinchu 310, Taiwan

来源：

LOW-DIMENSIONAL NANOSCALE ELECTRONIC AND PHOTONIC DEVICES 5 -AND- STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 54 (SOTAPOCS 54) | 2012年 / 50卷 / 06期

关键词：

THIN-FILM TRANSISTORS; PLASTIC SUBSTRATE; PERFORMANCE; INTEGRATION; STABILITY;

D O I：

10.1149/05006.0293ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report successful implementation of top-gate staggered a-IGZO TFTs with decent performance and environmental stability by adopting the SiOx/SiNx bi-layer gate-insulator stack. We successfully integrated the top-gate staggered a-IGZO TFTs into a working 2.2-inch AMOLED display panel, demonstrating the real use of the developed TFTs. We had also successfully implemented flexible top-gate staggered a-IGZO TFTs on colorless and transparent polyimide-based nanocomposite substrates using fully lithographic and etching processes that are compatible with existing TFT mass fabrication technologies. The TFTs showed decent performances (with mobility>10 cm(2)/V.s) either as fabricated or as de-bonded from the carrier glass. By bending the devices to different radii of curvature, influences of mechanical strains on characteristics of the flexible a-IGZO TFTs were also investigated.

引用

页码：293 / 309

页数：17

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