Rapid thermal recrystallization of amorphous silicon films

被引：2
|
作者：
Beshkov, GD
Dimitrov, DB
Lazarova, V
Koprinarova, J
Gesheva, K
Vlaev, E
机构：
[1] Institute of Solid State Physics, Bulgaria Academy of Sciences, 1784-Sofia
来源：
JOURNAL OF MATERIALS RESEARCH | 1997年 / 12卷 / 10期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1557/JMR.1997.0331
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work the properties of polycrystalline silicon layers obtained by rapid thermal annealing have been discussed. Amorphous silicon layers with thickness of 3000 Angstrom have been deposited on silicon wafers in rf sputtering system. The layers were annealed for 15 s to 5 min at temperatures in the range 800-1200 degrees C in vacuum 5 x 10(-5) Torr. A correlation was established between structure, morphology, sheet resistance, and the parameters of the RTA annealing.
引用
收藏
页码：2511 / 2514
页数：4
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