Synthesis and characterization of amorphous silicon oxide nanowires embedded with Ni nanoparticles

被引：6

作者：

Jang, Seonhee ^{[1
]}

Lee, Youngil ^{[1
]}

Cho, Suhwan ^{[1
]}

Kim, Donghoon ^{[1
]}

机构：

[1] Samsung Electromech Co Ltd, Cent R&D Inst, Suwon 443743, Gyunggi Do, South Korea

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2013年 / 137卷 / 03期

关键词：

Oxide; Amorphous materials; Heat treatment; Luminescence; PHOTOLUMINESCENCE; GROWTH; LUMINESCENCE; NANOTUBES;

D O I：

10.1016/j.matchemphys.2012.09.073

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth of silicon oxide nanowires (SiOxNWs) was obtained by thermal process of nickel (Ni) nanoparticles (NPs) deposited on silicon (Si) wafer in mixed gases of nitrogen (N-2) and hydrogen (H-2). TEM analysis showed that SiOxNWs had diameters ranging from 100 to 200 nm with lengths extending up to a few gm and their structure was amorphous. SiOxNWs were grown by the reaction between Ni NPs and Si wafer and Ni NPs acted as catalysts. Ni silicides (NixSi) were also formed inside the wafer by Ni diffusion into Si wafer. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：898 / 903

页数：6

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