Low-voltage transparent thin-film transistors with ZnO/ITO double-channel layers

被引：5
作者：
Lu, Aixia [1 ,2 ]
Huang, Hongmei [1 ]
机构：
[1] Jiangsu Normal Univ, Sch Phys & Elect Engn, Xuzhou 221116, Peoples R China
[2] Jiangsu Normal Univ, Sch Phys & Elect Engn, Jiangsu Key Lab Adv Laser Mat & Devices, Xuzhou 221116, Peoples R China
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 10期
关键词：
GEL GATE DIELECTRICS; AC CONDUCTIVITY; TEMPERATURE; TRANSITION; OXIDE;
D O I：
10.7567/JJAP.54.106502
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report an investigation of the effects of thin film transistors (TFTs) using double-channel layers on the electrical properties of transparent ZnO TFTs. TFTs were fabricated at room temperature, which with ZnO channel layers exhibit a performance with an on/off ratio of 10(5), a subthreshold swing of 0.11V/decade, and a mobility of 4.6cm(2)V(-1) s(-1). The field-effect mobility, current on/off ratio, and subthreshold swing of such TFTs with ZnO/ITO double-channel layers were estimated to be 21cm(2)V(-1) s(-1), 10(6), and 0.1V/decade, respectively. The mobility, switching operation, and on/off ratio of the ZnO TFTs were improved considerably after ITO channel deposition. (c) 2015 The Japan Society of Applied Physics
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页数：4
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