Features of the transport of sputtered atoms during Ta2O5 film deposition onto substrates of complicated configuration

被引:2
作者
Bystrov, YA [1 ]
Laska, VL [1 ]
Vol'pyas, VA [1 ]
Govako, EA [1 ]
Timofeev, DE [1 ]
Troshkov, VV [1 ]
机构
[1] St Petersburg State Electrotech Univ, St Petersburg, Russia
关键词
Static Modeling; Modeling Technique; Vacuum Chamber; Magnetron Sputtering; Applied Problem;
D O I
10.1134/1.1467265
中图分类号
O59 [应用物理学];
学科分类号
摘要
The possibility of obtaining Ta2O5 films with homogeneous properties on the surface of substrates possessing complicated shapes was studied. In the deposition systems employing point molecular sources of a vapor flow, the problem is solved by using various planetar manipulators ensuring complicated rotations of the substrates in a vacuum chamber; in the case of magnetron sputtering, a more technological method can be realized based on the controlled transport of sputtered particles in the target-substrate drift space. The transport of sputtered particles is described using various models and static modeling techniques, which can be also of interest for solving numerous applied problems in the physics of gas discharge. The results were used to optimize the technology of Ta2O5 film deposition onto large-size substrates of complicated configurations. (C) 2002 MAIK "Nauka/Interperiodica".
引用
收藏
页码:173 / 175
页数:3
相关论文
共 6 条
[1]  
Khomutov V.P., 1997, PETERB ZH ELEKTRON, V2, P3
[2]  
LASKA VL, 1985, SER ELEKTROVAK GAZOR, V1
[3]  
TSIMBALISTOV AV, 2000, P 6 C RUSS STOM ASS, P285
[4]   Quasihard-sphere model in simulation of the processes of particle scattering [J].
Vol'pyas, VA ;
Gol'man, EK .
TECHNICAL PHYSICS, 2000, 45 (03) :298-303
[5]  
Volpyas V. A., 1996, Technical Physics, V41, P304
[6]  
VOLPYAS VA, 1997, PHYSICS WEAKLY IONIZ