Low-K, narrow linewidth III-V-on-SOI distributed feedback lasers with backside sampled Bragg gratings

被引:5
作者
Ramirez, Joan Manel [1 ]
Souleiman, Amin [1 ,2 ]
De La Horie, Pierre Fanneau [1 ]
Neel, Delphine [1 ]
Vaissiere, Nicolas [1 ]
Ramez, Valentin [3 ]
Besancon, Claire [1 ]
Malhouitre, Stephane [3 ]
Wilk, Arnaud [1 ]
Merghem, Kamel [2 ]
Decobert, Jean [1 ]
Hassan, Karim [1 ,3 ]
Bitauld, David [1 ]
机构
[1] III V Lab, Ave Augustin Fresnel 1, F-91767 Palaiseau, France
[2] Inst Polytech Paris, Telecom SudParis, SAMOVAR, F-9112 Palaiseau, France
[3] Univ Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France
基金
欧盟地平线“2020”;
关键词
MODULATION; GHZ; PLATFORM;
D O I
10.1364/OE.469735
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We demonstrate a heterogeneously integrated III-V-on-SOI distributed feedback laser with a low grating strength (K < 40 cm-1) and a narrow linewidth of increment nu = 118 kHz. The laser operates single mode with a side-mode suppression ratio over 45 dB, provides a single-sided waveguide-coupled output power of 22 mW (13.4 dBm) and has a wall-plug efficiency of 17%. The dynamic characteristics were also evaluated, obtaining an intrinsic 3 dB modulation bandwidth of 14 GHz and a photon lifetime of 8 ps. Large-signal intensity modulation using a 231-1 PRBS pattern length revealed open eye diagrams up to 25 Gb/s and a penalty on the dynamic extinction ratio lower than 1 dB after transmission over a 2 km standard single mode optical fiber.
引用
收藏
页码:36717 / 36726
页数:10
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