Low-Power Complementary Inverter Based on Graphene/Carbon-Nanotube and Graphene/MoS2 Barristors

被引：4

作者：

Shin, Dong-Ho ^{[1
]}

You, Young Gyu ^{[1
]}

Jo, Sung Il ^{[2
]}

Jeong, Goo-Hwan ^{[2
]}

Campbell, Eleanor E. B. ^{[3
,4
]}

Chung, Hyun-Jong ^{[1
]}

Jhang, Sung Ho ^{[1
]}

机构：

[1] Konkuk Univ, Sch Phys, Seoul 05029, South Korea

[2] Kangwon Natl Univ, Dept Adv Mat Sci & Engn, Chunchon 24341, South Korea

[3] Univ Edinburgh, Sch Chem, EaStCHEM, David Brewster Rd, Edinburgh EH9 3FJ, Midlothian, Scotland

[4] Ehwa Womans Univ, Dept Phys, Seoul 03760, South Korea

来源：

NANOMATERIALS | 2022年 / 12卷 / 21期

关键词：

complementary inverter; low power; graphene/carbon-nanotube junction; barristor; TRANSISTORS; DEVICE; MOS2;

D O I：

10.3390/nano12213820

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The recent report of a p-type graphene(Gr)/carbon-nanotube(CNT) barristor facilitates the application of graphene barristors in the fabrication of complementary logic devices. Here, a complementary inverter is presented that combines a p-type Gr/CNT barristor with a n-type Gr/MoS2 barristor, and its characteristics are reported. A sub-nW (similar to 0.2 nW) low-power inverter is demonstrated with a moderate gain of 2.5 at an equivalent oxide thickness (EOT) of similar to 15 nm. Compared to inverters based on field-effect transistors, the sub-nW power consumption was achieved at a much larger EOT, which was attributed to the excellent switching characteristics of Gr barristors.

引用

页数：9

共 41 条

[21] High-performance carbon-nanotube-based complementary field-effect-transistors and integrated circuits with yttrium oxide [J].