Low-Power Complementary Inverter Based on Graphene/Carbon-Nanotube and Graphene/MoS2 Barristors

被引：3

作者：

Shin, Dong-Ho ^{[1
]}

You, Young Gyu ^{[1
]}

Jo, Sung Il ^{[2
]}

Jeong, Goo-Hwan ^{[2
]}

Campbell, Eleanor E. B. ^{[3
,4
]}

Chung, Hyun-Jong ^{[1
]}

Jhang, Sung Ho ^{[1
]}

机构：

[1] Konkuk Univ, Sch Phys, Seoul 05029, South Korea

[2] Kangwon Natl Univ, Dept Adv Mat Sci & Engn, Chunchon 24341, South Korea

[3] Univ Edinburgh, Sch Chem, EaStCHEM, David Brewster Rd, Edinburgh EH9 3FJ, Midlothian, Scotland

[4] Ehwa Womans Univ, Dept Phys, Seoul 03760, South Korea

来源：

NANOMATERIALS | 2022年 / 12卷 / 21期

关键词：

complementary inverter; low power; graphene/carbon-nanotube junction; barristor; TRANSISTORS; DEVICE; MOS2;

D O I：

10.3390/nano12213820

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The recent report of a p-type graphene(Gr)/carbon-nanotube(CNT) barristor facilitates the application of graphene barristors in the fabrication of complementary logic devices. Here, a complementary inverter is presented that combines a p-type Gr/CNT barristor with a n-type Gr/MoS2 barristor, and its characteristics are reported. A sub-nW (similar to 0.2 nW) low-power inverter is demonstrated with a moderate gain of 2.5 at an equivalent oxide thickness (EOT) of similar to 15 nm. Compared to inverters based on field-effect transistors, the sub-nW power consumption was achieved at a much larger EOT, which was attributed to the excellent switching characteristics of Gr barristors.

引用

页数：9

共 41 条

[1] Effect of the growth temperature on the diameter distribution and chirality of single-wall carbon nanotubes
Bandow, S
Asaka, S
Saito, Y
Rao, AM
Grigorian, L
Richter, E
Eklund, PC
[J]. PHYSICAL REVIEW LETTERS, 1998, 80 (17) : 3779 - 3782
[2] Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper
Banszerus, Luca
Schmitz, Michael
Engels, Stephan
Dauber, Jan
Oellers, Martin
Haupt, Federica
Watanabe, Kenji
Taniguchi, Takashi
Beschoten, Bernd
Stampfer, Christoph
[J]. SCIENCE ADVANCES, 2015, 1 (06):
[3] Optoelectronic response and excitonic properties of monolayer MoS2
Ben Amara, Imen
Ben Salem, Emna
Jaziri, Sihem
[J]. JOURNAL OF APPLIED PHYSICS, 2016, 120 (05)
[4] Review of carbon nanotube nanoelectronics and macroelectronics
Che, Yuchi
Chen, Haitian
Gui, Hui
Liu, Jia
Liu, Bilu
Zhou, Chongwu
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (07)
[5] Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS2 Field-Effect Transistors
Chee, Sang-Soo
Seo, Dongpyo
Kim, Hanggyu
Jang, Hanbyeol
Lee, Seungmin
Moon, Seung Pil
Lee, Kyu Hyoung
Kim, Sung Wng
Choi, Hyunyong
Ham, Moon-Ho
[J]. ADVANCED MATERIALS, 2019, 31 (02)
[6] A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors
Cho, Ah-Jin
Park, Kee Chan
Kwon, Jang-Yeon
[J]. NANOSCALE RESEARCH LETTERS, 2015, 10
[7] High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors
Das, Saptarshi
Dubey, Madan
Roelofs, Andreas
[J]. APPLIED PHYSICS LETTERS, 2014, 105 (08)
[8] Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide
Das, Tanmoy
Chen, Xiang
Jang, Houk
Oh, Il-Kwon
Kim, Hyungjun
Ahn, Jong-Hyun
[J]. SMALL, 2016, 12 (41) : 5720 - 5727
[9] Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe2 and n-MoS2
Du, Wanying
Jia, Xionghui
Cheng, Zhixuan
Xu, Wanjing
Li, Yanping
Dai, Lun
[J]. ISCIENCE, 2021, 24 (12)
[10] SWNT growth by CVD on Ferritin-based iron catalyst nanoparticles towards CNT sensors
Durrer, L.
Helbling, T.
Zenger, C.
Jungen, A.
Stampfer, C.
Hierold, C.
[J]. SENSORS AND ACTUATORS B-CHEMICAL, 2008, 132 (02) : 485 - 490

← 1 2 3 4 5 →