On the Theory of the Electronic States of a "Quantum Dot-Graphene-SiO2 + n+-Si Substrate" System

被引：5

作者：

Alisultanov, Z. Z. ^{[1
,2
]}

机构：

[1] Russian Acad Sci, Prokhorov Gen Phys Inst, Moscow 119991, Russia

[2] RAS, Daghestan Sci Ctr, Amirkhanov Inst Phys, Makhachkala 367003, Russia

来源：

SEMICONDUCTORS | 2013年 / 47卷 / 06期

关键词：

SUBSTRATE SYSTEM; CHARGE-TRANSFER; GRAPHENE; MODEL; CHEMISORPTION; ADSORPTION; FIELD; FILM; GAS;

D O I：

10.1134/S106378261306002X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electronic states of a "quantum dot-graphene monolayer-SiO2 + n (+)-Si substrate" system in an external magnetic field are studied. An analytical expression for charge transfer in this system is obtained. The electronic states of a "quantum dot-graphene bilayer-SiO2 + n (+)-Si substrate" system are considered. The systems under study are interesting from the viewpoint of controlling the optical properties of a quantum dot by means of an applied electric field.

引用

页码：815 / 819

页数：5

共 21 条

[1] Electron States in the Quantum Dot-Graphene-Monolayer-SiO2/n+ Si-Substrate System [J].

Alisultanov, Z. Z. ;

Meilanov, R. P. ;

Nukhov, A. K. ;

Musaev, G. M. ;

Idayatov, E. I. .

TECHNICAL PHYSICS LETTERS, 2012, 38 (06) :552-554

[2] On the theory of electronic states of the "epitaxial graphene-quantum-well film" system [J].

Alisultanov, Z. Z. ;

Meilanov, R. P. .

PHYSICS OF THE SOLID STATE, 2012, 54 (07) :1486-1493

[3]

Alisultanov Z. Z., 2012, FIZ MET METALLOVED, V113, P1504

[4] LOCALIZED MAGNETIC STATES IN METALS [J].

ANDERSON, PW .

PHYSICAL REVIEW, 1961, 124 (01) :41-&

[5] ENHANCEMENT OF SPIN SPLITTING DUE TO SPATIAL CONFINEMENT IN INXGA1-XAS QUANTUM DOTS [J].

BAYER, M ;

TIMOFEEV, VB ;

GUTBROD, T ;

FORCHEL, A ;

STEFFEN, R ;

OSHINOWO, J .

PHYSICAL REVIEW B, 1995, 52 (16) :11623-11625

[6] Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics [J].

Berger, C ;

Song, ZM ;

Li, TB ;

Li, XB ;

Ogbazghi, AY ;

Feng, R ;

Dai, ZT ;

Marchenkov, AN ;

Conrad, EH ;

First, PN ;

de Heer, WA .

JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (52) :19912-19916

[7] ELECTRONIC-STRUCTURE OF ULTRASMALL QUANTUM-WELL BOXES [J].

BRYANT, GW .

PHYSICAL REVIEW LETTERS, 1987, 59 (10) :1140-1143

[8] The electronic properties of graphene [J].

Castro Neto, A. H. ;

Guinea, F. ;

Peres, N. M. R. ;

Novoselov, K. S. ;

Geim, A. K. .

REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162

[9] Electronic states in epitaxial graphene fabricated on silicon carbide [J].

Davydov, S. Yu .

SEMICONDUCTORS, 2011, 45 (08) :1070-1076

[10] On Charge Transfer in the Adsorbed Molecules-Graphene Monolayer-SiC Substrate System [J].

Davydov, S. Yu .

SEMICONDUCTORS, 2011, 45 (05) :618-622

← 1 2 3 →