Demonstration of 426 nm InGaN/GaN laser diodes fabricated on free-standing semipolar (11(2)over-bar2) gallium nitride substrates

被引：43
作者：
Asamizu, Hirokuni [1 ]
Saito, Makoto [1 ]
Fujito, Kenji [2 ]
Speck, James S. [1 ]
DenBaars, Steven P. [1 ]
Nakamura, Shuji [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Mitsubishi Chem Corp, Optoelect Lab, Ushiku, Ibaraki 3001295, Japan
来源：
APPLIED PHYSICS EXPRESS | 2008年 / 1卷 / 09期
关键词：
D O I：
10.1143/APEX.1.091102
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Semipolar (11 (2) over bar2) plane III-nitride laser diodes (LDs) were realized on low extended defect density semipolar (11 (2) over bar2) GaN bulk substrates. The LD structures were grown by conventional atmospheric-pressure metal organic chemical vapor deposition (MOCVD), using conditions similar to that of c-plane nitride device growth. The mirror facet for a laser cavity was formed by dry-etching of III-V nitride films without cleaving. Stimulated emission was observed at 426.9 nm with a full width at half maximum (FWHM) of less than 1 nm. The (11 (2) over bar2) plane laser diode had threshold currents (I(th)) of 306 mA, corresponding to a threshold current densities (J(th)) of 12.8 kA/cm(2). (C) 2008 The Japan Society of Applied Physics.
引用
收藏
页码：0911021 / 0911023
页数：3
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