Demonstration of 426 nm InGaN/GaN laser diodes fabricated on free-standing semipolar (11(2)over-bar2) gallium nitride substrates

被引：43
作者：
Asamizu, Hirokuni [1 ]
Saito, Makoto [1 ]
Fujito, Kenji [2 ]
Speck, James S. [1 ]
DenBaars, Steven P. [1 ]
Nakamura, Shuji [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Mitsubishi Chem Corp, Optoelect Lab, Ushiku, Ibaraki 3001295, Japan
来源：
APPLIED PHYSICS EXPRESS | 2008年 / 1卷 / 09期
关键词：
D O I：
10.1143/APEX.1.091102
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Semipolar (11 (2) over bar2) plane III-nitride laser diodes (LDs) were realized on low extended defect density semipolar (11 (2) over bar2) GaN bulk substrates. The LD structures were grown by conventional atmospheric-pressure metal organic chemical vapor deposition (MOCVD), using conditions similar to that of c-plane nitride device growth. The mirror facet for a laser cavity was formed by dry-etching of III-V nitride films without cleaving. Stimulated emission was observed at 426.9 nm with a full width at half maximum (FWHM) of less than 1 nm. The (11 (2) over bar2) plane laser diode had threshold currents (I(th)) of 306 mA, corresponding to a threshold current densities (J(th)) of 12.8 kA/cm(2). (C) 2008 The Japan Society of Applied Physics.
引用
收藏
页码：0911021 / 0911023
页数：3
相关论文
共 32 条
[1]   Characterization of planar semipolar gallium nitride films on sapphire substrates [J].
Baker, TJ ;
Haskell, BA ;
Wu, F ;
Speck, JS ;
Nakamura, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (4-7) :L154-L157
[2]   Characterization of planar semipolar gallium nitride films on spinel substrates [J].
Baker, TJ ;
Haskell, BA ;
Wu, F ;
Fini, PT ;
Speck, JS ;
Nakamura, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (28-32) :L920-L922
[3]  
Bernardini F, 1999, PHYS STATUS SOLIDI B, V216, P391, DOI 10.1002/(SICI)1521-3951(199911)216:1<391::AID-PSSB391>3.0.CO
[4]  
2-K
[5]   Nonpolar m-plane blue-light-emitting diode lamps with output power of 23.5 mW under pulsed operation [J].
Chakraborty, A ;
Haskell, BA ;
Masui, H ;
Keller, S ;
Speck, JS ;
DenBaars, SP ;
Nakamura, S ;
Mishra, UK .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (2A) :739-741
[6]   Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak [J].
Chakraborty, A ;
Haskell, BA ;
Keller, S ;
Speck, JS ;
DenBaars, SP ;
Nakamura, S ;
Mishra, UK .
APPLIED PHYSICS LETTERS, 2004, 85 (22) :5143-5145
[7]   Ultraviolet light emitting diodes using non-polar a-plane GaN-AlGaN multiple quantum wells [J].
Chen, CQ ;
Adivarahan, V ;
Yang, JW ;
Shatalov, M ;
Kuokstis, E ;
Khan, MA .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (9AB) :L1039-L1040
[8]   Spontaneous emission of localized excitons in InGaN single and multiquantum well structures [J].
Chichibu, S ;
Azuhata, T ;
Sota, T ;
Nakamura, S .
APPLIED PHYSICS LETTERS, 1996, 69 (27) :4188-4190
[9]   Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire [J].
Chitnis, A ;
Chen, C ;
Adivarahan, V ;
Shatalov, M ;
Kuokstis, E ;
Mandavilli, V ;
Yang, J ;
Khan, MA .
APPLIED PHYSICS LETTERS, 2004, 84 (18) :3663-3665
[10]   Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes [J].
Farrell, Robert M. ;
Feezell, Daniel F. ;
Schmidt, Mathew C. ;
Haeger, Daniel A. ;
Kelchner, Kathryn M. ;
Iso, Kenji ;
Yamada, Hisashi ;
Saito, Makoto ;
Fujito, Kenji ;
Cohen, Daniel A. ;
Speck, James S. ;
DenBaars, Steven P. ;
Nakamura, Shuji .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (29-32) :L761-L763
1234