Surface characterization of GaN(0001) grown by liquid phase epitaxy using coaxial impact-collision ion scattering spectroscopy

被引：3

作者：

Suto, Hirofumi ^{[1
]}

Fuji, Shunjiro ^{[1
]}

Kawamura, Fumio ^{[1
]}

Yoshimura, Masashi ^{[1
]}

Kitaoka, Yasuo ^{[2
]}

Mori, Yusuke ^{[1
]}

Honda, Shin-ichi ^{[1
]}

Katayama, Mitsuhiro ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Div Elect Elect & Informat Engn, Osaka 5650871, Japan

[2] Osaka Univ, Frontier Res Ctr, Osaka 5650871, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 09期

基金：

日本学术振兴会;

关键词：

gallium nitride; liquid phase epitaxy; ion scattering spectroscopy;

D O I：

10.1143/JJAP.47.7281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We characterized the surface cleanliness. structure. and composition oh GaN(0001) grown by liquid phase epitaxy (LPE) using coaxial impact-collision ion scattering spectroscopy (CAICISS). Contamination oil the as-received LPL-GaN(0001) vvas removed by annealing at 900 degrees C, but annealing was unable to remove the O atoms from the as-grown surface, indicating that the as-grown sample incorporated O atoms. Although the as-grown sample contained O atoms, its structure perfection was maintained. These facts were explained by localization of O atoms near dislocations. The etched surface exhibited high crystalline quality, which was comparable to that of the sample grown by vapor phase epitaxy (VPE).

引用

页码：7281 / 7284

页数：4

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