Memristive devices as parameter setting elements in programmable gain amplifiers

被引：25

作者：

Berdan, R. ^{[1
]}

Prodromakis, T. ^{[1
]}

Salaoru, I. ^{[1
]}

Khiat, A. ^{[1
]}

Toumazou, C. ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn, London SW7 2AZ, England

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 24期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.4770315

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we investigate the AC performance of a variable gain amplifier that utilizes an in-house manufactured memristor as a gain setting element. Analysis includes frequency and phase responses as the memristor is programmed at different resistive states. A TiO2-based solid-state memristor was employed in the feedback branch of an inverting voltage amplifier and was programmed externally. We have also observed indications of memcapacitive effects and a correlation with resistive states is presented. We demonstrate that our TiO2 memristive devices, although possessing relatively low R-OFF/R-ON switching ratios (similar to 10), are versatile and can be used reliably in programmable gain amplifiers. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4770315]

引用

页数：3

共 17 条

[1] High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm
Alibart, Fabien
Gao, Ligang
Hoskins, Brian D.
Strukov, Dmitri B.
[J]. NANOTECHNOLOGY, 2012, 23 (07)
[2] Berdan R., 2012, IET ELECT LETT, V48, P1105
[3] MEMRISTOR - MISSING CIRCUIT ELEMENT
CHUA, LO
[J]. IEEE TRANSACTIONS ON CIRCUIT THEORY, 1971, CT18 (05): : 507 - +
[4] Biomimetic model of the outer plexiform layer by incorporating memristive devices
Gelencser, A.
Prodromakis, T.
Toumazou, C.
Roska, T.
[J]. PHYSICAL REVIEW E, 2012, 85 (04):
[5] Govoreanu B, 2011, IEEE INT EL DEV M IE
[6] A highly linear 125-MHz CMOS switched-resistor programmable-gain amplifier
Hsu, CC
Wu, JT
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (10) : 1663 - 1670
[7] Lee MJ, 2011, NAT MATER, V10, P625, DOI [10.1038/NMAT3070, 10.1038/nmat3070]
[8] On the design of a programmable-gain amplifier with built-in compact DC-offset cancellers for very low-voltage WLAN systems
Mak, Pui-In
U, Seng-Pan
Martins, Rui P.
[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2008, 55 (02) : 496 - 509
[9] Practical Approach to Programmable Analog Circuits With Memristors
Pershin, Yuriy V.
Di Ventra, Massimiliano
[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2010, 57 (08) : 1857 - 1864
[10] Experimental demonstration of associative memory with memristive neural networks
Pershin, Yuriy V.
Di Ventra, Massimiliano
[J]. NEURAL NETWORKS, 2010, 23 (07) : 881 - 886

← 1 2 →