Memristive devices as parameter setting elements in programmable gain amplifiers

被引：25

作者：

Berdan, R. ^{[1
]}

Prodromakis, T. ^{[1
]}

Salaoru, I. ^{[1
]}

Khiat, A. ^{[1
]}

Toumazou, C. ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn, London SW7 2AZ, England

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 24期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.4770315

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we investigate the AC performance of a variable gain amplifier that utilizes an in-house manufactured memristor as a gain setting element. Analysis includes frequency and phase responses as the memristor is programmed at different resistive states. A TiO2-based solid-state memristor was employed in the feedback branch of an inverting voltage amplifier and was programmed externally. We have also observed indications of memcapacitive effects and a correlation with resistive states is presented. We demonstrate that our TiO2 memristive devices, although possessing relatively low R-OFF/R-ON switching ratios (similar to 10), are versatile and can be used reliably in programmable gain amplifiers. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4770315]

引用

页数：3

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