A complex polynomial predistorter chip in CMOS for baseband or IF linearization of RF power amplifiers

被引:0
|
作者
Westesson, E [1 ]
Sundström, L [1 ]
机构
[1] Lund Univ, Dept Appl Elect, Competence Ctr Circuit Design, SE-22100 Lund, Sweden
来源
ISCAS '99: PROCEEDINGS OF THE 1999 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL 1: VLSI | 1999年
关键词
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper describes the implementation of a 5:th order complex polynomial predistorter chip in CMOS for linearization of RF power amplifiers. The architecture chosen allows operation either at baseband or IE The chip was implemented in a 0.8 mu m CMOS process and operates at 3.3V supply voltage with 60 mW power consumption. The special architecture of the polynomial predistorter is exploited to reduce the complexity and current consumption of individual blocks. Two-tone measurements performed at an IF of 200 MHz demonstrates that third order intermodulation products can be suppressed by more than 30 dB.
引用
收藏
页码:206 / 209
页数:4
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