Magnetoresistance Investigations in Exchange-Biased IrMn/NiFe Bilayers

被引:0
作者
Fulara, Himanshu [1 ]
Chaudhary, Sujeet [1 ]
Kashyap, Subhash C. [1 ]
机构
[1] Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
来源
SOLID STATE PHYSICS, VOL 57 | 2013年 / 1512卷
关键词
Magnetoresistance; Ion-beam sputtering; Training effect; Reversal asymmetry;
D O I
10.1063/1.4791469
中图分类号
O59 [应用物理学];
学科分类号
摘要
Magnetoresistance measurements have been employed to demonstrate the thermal evolution of exchange bias, reversal asymmetry and training effect in ion-beam sputtered IrMn/NiFe bilayers. Magnetoresistance investigations have shown a significant increase in exchange bias field and coercivity, pronounced reversal asymmetry and, most prominently, a strong training effect all occurring at low temperature (T < 50 K). These experimental results are attributed to the occurrence of temperature dependent crossover from uniaxial to biaxial anisotropy in the IrMn layer.
引用
收藏
页码:1178 / 1179
页数:2
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