Nb2O5;
Blocking layer;
Sputtering;
Dye-sensitized solar cells;
BACK-REACTION;
SUBSTRATE;
FILMS;
D O I:
10.1007/s10832-014-9977-2
中图分类号:
TQ174 [陶瓷工业];
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
The introduction of a niobium oxide layer between fluorine-doped tin oxide (FTO) and TiO2 electrodes is known to enhance the power conversion efficiency (eta) of dye-sensitized solar cells (DSSCs). Nb thin films were deposited on FTO glass substrates using RF magnetron sputtering. TiO2 pastes were then screen-printed onto the Nb thin films. The multilayered structures were annealed at 500 A degrees C in a muffle furnace and assembled with Pt counter electrodes for DSSC performance evaluation. The Nb thin films were oxidized during the calcination process, producing a post-oxidized layer that increased the solar-cell efficiency by about 15 % and the photocurrent density by approximately 25 %.
机构:
Korea Inst Energy Res, Photovolta Res Ctr, Taejon 305343, South Korea
Chungnam Natl Univ, Dept Mat Sci & Engn, Daeduck 305764, South KoreaKorea Inst Energy Res, Photovolta Res Ctr, Taejon 305343, South Korea
Cho, Tae-Yeon
;
Ko, Kwan-Woo
论文数: 0引用数: 0
h-index: 0
机构:
Korea Inst Energy Res, Photovolta Res Ctr, Taejon 305343, South KoreaKorea Inst Energy Res, Photovolta Res Ctr, Taejon 305343, South Korea
Ko, Kwan-Woo
;
Yoon, Soon-Gil
论文数: 0引用数: 0
h-index: 0
机构:
Chungnam Natl Univ, Dept Mat Sci & Engn, Daeduck 305764, South KoreaKorea Inst Energy Res, Photovolta Res Ctr, Taejon 305343, South Korea
Yoon, Soon-Gil
;
Sekhon, Satpal Singh
论文数: 0引用数: 0
h-index: 0
机构:
Guru Nanak Dev Univ, Dept Phys, Amritsar 143005, Punjab, IndiaKorea Inst Energy Res, Photovolta Res Ctr, Taejon 305343, South Korea
Sekhon, Satpal Singh
;
Kang, Man Gu
论文数: 0引用数: 0
h-index: 0
机构:
Elect & Telecommun Res Inst, IT NT Grp, Ion Device Team, Taejon 305700, South KoreaKorea Inst Energy Res, Photovolta Res Ctr, Taejon 305343, South Korea
Kang, Man Gu
;
Hong, Young-Sik
论文数: 0引用数: 0
h-index: 0
机构:
Seoul Natl Univ Educ, Dept Sci Educ, Seoul 137742, South KoreaKorea Inst Energy Res, Photovolta Res Ctr, Taejon 305343, South Korea
Hong, Young-Sik
;
Han, Chi-Hwan
论文数: 0引用数: 0
h-index: 0
机构:
Korea Inst Energy Res, Photovolta Res Ctr, Taejon 305343, South KoreaKorea Inst Energy Res, Photovolta Res Ctr, Taejon 305343, South Korea
机构:
Korea Inst Energy Res, Photovolta Res Ctr, Taejon 305343, South Korea
Chungnam Natl Univ, Dept Mat Sci & Engn, Daeduck 305764, South KoreaKorea Inst Energy Res, Photovolta Res Ctr, Taejon 305343, South Korea
Cho, Tae-Yeon
;
Ko, Kwan-Woo
论文数: 0引用数: 0
h-index: 0
机构:
Korea Inst Energy Res, Photovolta Res Ctr, Taejon 305343, South KoreaKorea Inst Energy Res, Photovolta Res Ctr, Taejon 305343, South Korea
Ko, Kwan-Woo
;
Yoon, Soon-Gil
论文数: 0引用数: 0
h-index: 0
机构:
Chungnam Natl Univ, Dept Mat Sci & Engn, Daeduck 305764, South KoreaKorea Inst Energy Res, Photovolta Res Ctr, Taejon 305343, South Korea
Yoon, Soon-Gil
;
Sekhon, Satpal Singh
论文数: 0引用数: 0
h-index: 0
机构:
Guru Nanak Dev Univ, Dept Phys, Amritsar 143005, Punjab, IndiaKorea Inst Energy Res, Photovolta Res Ctr, Taejon 305343, South Korea
Sekhon, Satpal Singh
;
Kang, Man Gu
论文数: 0引用数: 0
h-index: 0
机构:
Elect & Telecommun Res Inst, IT NT Grp, Ion Device Team, Taejon 305700, South KoreaKorea Inst Energy Res, Photovolta Res Ctr, Taejon 305343, South Korea
Kang, Man Gu
;
Hong, Young-Sik
论文数: 0引用数: 0
h-index: 0
机构:
Seoul Natl Univ Educ, Dept Sci Educ, Seoul 137742, South KoreaKorea Inst Energy Res, Photovolta Res Ctr, Taejon 305343, South Korea
Hong, Young-Sik
;
Han, Chi-Hwan
论文数: 0引用数: 0
h-index: 0
机构:
Korea Inst Energy Res, Photovolta Res Ctr, Taejon 305343, South KoreaKorea Inst Energy Res, Photovolta Res Ctr, Taejon 305343, South Korea