Facile preparation of a Nb2O5 blocking layer for dye-sensitized solar cells

被引:8
作者
Lim, Sung-Hwan [1 ]
Park, Kwang-Won [1 ]
Jin, Ming Hao [1 ]
Ahn, Sungwoo [1 ]
Song, Jeemin [1 ]
Hong, Jongin [1 ]
机构
[1] Chung Ang Univ, Dept Chem, Seoul 156756, South Korea
基金
新加坡国家研究基金会;
关键词
Nb2O5; Blocking layer; Sputtering; Dye-sensitized solar cells; BACK-REACTION; SUBSTRATE; FILMS;
D O I
10.1007/s10832-014-9977-2
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The introduction of a niobium oxide layer between fluorine-doped tin oxide (FTO) and TiO2 electrodes is known to enhance the power conversion efficiency (eta) of dye-sensitized solar cells (DSSCs). Nb thin films were deposited on FTO glass substrates using RF magnetron sputtering. TiO2 pastes were then screen-printed onto the Nb thin films. The multilayered structures were annealed at 500 A degrees C in a muffle furnace and assembled with Pt counter electrodes for DSSC performance evaluation. The Nb thin films were oxidized during the calcination process, producing a post-oxidized layer that increased the solar-cell efficiency by about 15 % and the photocurrent density by approximately 25 %.
引用
收藏
页码:221 / 227
页数:7
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