Temperature-insensitive operation of real index guided 1.06 μm InGaAs GaAsP strain-compensated single-quantum-well laser diodes

被引：24

作者：

Asano, H ^{[1
]}

Wada, M ^{[1
]}

Fukunaga, T ^{[1
]}

Hayakawa, T ^{[1
]}

机构：

[1] Fuji Photo Film Co Ltd, Miyanodai Technol Dev Ctr, Kaisei, Kanagawa 2588538, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 21期

关键词：

D O I：

10.1063/1.124071

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature-insensitive characteristics have been demonstrated in single mode 1.06 mu m InGaAs single-quantum-well laser diodes grown by metalorganic vapor phase epitaxy. The large band-gap AlGaInP current blocking layer is employed in the buried-ridge laser structure. Tensile-strained GaAsP barrier layers were used for strain compensation and electron barriers for reducing electron overflow from a quantum well. As a result, almost totally temperature-insensitive light output-current characteristics have been realized. The uncoated device shows the highest record characteristics temperature of 437 K for the threshold current in the range of 20-50 degrees C. In addition, the slope efficiency does not change over 20-80 degrees C. (C) 1999 American Institute of Physics. [S0003-6951(99)00921-3].

引用

页码：3090 / 3092

页数：3

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