Growth of ZnO Thin Films by Using MOCVD with a High-Speed Rotating Disk Reactor

被引：7

作者：

Nishimoto, Naoki ^{[1
]}

Senthilkumar, Obuliraj ^{[2
]}

Yamamae, Takahiro ^{[3
]}

Senthilkumar, Kasilingam ^{[3
]}

Fujita, Yasuhisa ^{[3
]}

机构：

[1] Japan Sci & Technol Agcy, Higashihiroshima 7390046, Japan

[2] Shimane Univ, Res Project Promot Inst, Matsue, Shimane 6908504, Japan

[3] Shimane Univ, Interdisciplinary Fac Sci & Engn, Matsue, Shimane 6908504, Japan

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2008年 / 53卷 / 05期

关键词：

Characterization; Metalorganic vapor phase epitaxy; Zinc oxide; Semiconducting II-VI materials;

D O I：

10.3938/jkps.53.2951

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

ZnO thin films were grown by using MOCVD with separated nozzles and a vertical-type highspeed rotating disk reactor. The interaction between source gases is prevented by the separated nozzles. The high-speed disk rotating system realized laminar flow by suppressing the thermally-induced buoyancy flow, and it will be possible to inhibit the oxygen vacancies because the source gases are attracted on the substrate by the centripetal force. High thickness uniformity of below 2.0 % variation was obtained in 2-inch-diameter wafers. The results of the photoluminescence and the Hall-effect measurements were compared to the results obtained for conventional horizontal-type reactor and showed a suppression of the green emission band and of the carrier concentration, which shows the advantage of the high-speed rotating disk reactor.

引用

页码：2951 / 2954

页数：4

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