THERMAL CONDUCTIVITY, ANISOTROPY, AND INTERFACE RESISTANCES OF DIAMOND ON POLY-AlN

被引：0
|
作者：
Bozorg-Grayeli, Elah [1 ]
Li, Zijian [1 ]
Gambin, Vincent [1 ]
Asheghi, Mehdi [1 ]
Goodson, Kenneth E. [1 ]
机构：
[1] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA
来源：
2012 13TH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM) | 2012年
关键词：
Aluminum nitride; diamond; High Electron Mobility Transistors (HEMT); Thermal Boundary Resistance (TBR); thermal conductivity; Time-Domain Thermoreflectance (TDTR); ALGAN/GAN HEMTS; GAN;
D O I：
暂无
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
Due to their high thermal conductivity, diamond substrates are seen as a way to minimize the thermal resistance present in High Electron Mobility Transistor (HEMT) structures based on GaN. Single-crystal AlN transition layers facilitate the growth of high quality GaN on diamond, but such layers may increase the total thermal resistance of the composite substrate. This manuscript measures the thermal conductivity and interface resistance of a 1.4 mu m diamond film on a polycrystalline AlN substrate using picosecond time-domain thermoreflectance (TDTR) and nanosecond thermoreflectance. Varying beam widths are used to extract the thermal conductivity anisotropy of the diamond film.
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收藏
页码：1059 / 1064
页数：6
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