THE INFLUENCE OF THE ELECTRICALLY INACTIVE IMPURITY ON THE ENERGY SPECTRUM OF ELECTRON AND HOLE IN InAs/GaAs HETEROSTRUCTURE WITH InAs QUANTUM DOTS

被引:0
作者
Peleshchak, R. [1 ]
Kuzyk, O. [1 ]
Dan'kiv, O. [1 ]
机构
[1] Drohobych Ivan Franko State Pedag Univ, 24 Ivan Franko Str, Drogobych, Ukraine
来源
ROMANIAN JOURNAL OF PHYSICS | 2020年 / 65卷 / 7-8期
关键词
quantum dot; isovalent impurity; deformation; energy of electron and hole; STRESS;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In the framework of electron-deformation model, the influence of the electrically inactive impurity on the energy spectrum of electrons and holes in InAs/GaAs heterostructure with InAs quantum dots (QD) is investigated. Two cases are considered: the isovalent impurity of substitution and the neutral atom in the internode. It is established that the presence of the impurity in the center of spherical quantum dot leads to a decrease in energy of radiation, which corresponds to the recombination transition between the ground states of electron and hole. This effect is better manifested for small quantum dots and in the presence of interstitial impurity.
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页数:11
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