Pyroelectric properties of PZT(90/10) thin films on Pt/Si substrates

被引:0
|
作者
Huang, J
Lian, JY
Buchanan, RC
机构
来源
ISAF '96 - PROCEEDINGS OF THE TENTH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2 | 1996年
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The pyroelectric properties of PZT(90/10) thin films mere investigated. The films were prepared by metallo-organic spin deposition (MOD) technique on Pt(111)/Si substrates. Dense, (111)-oriented films, similar to 1.0 mu m thick, had a remnant polarization of 13-20 mu C/cm(2) and a coercive field of 10 similar to 30kV/cm. By using static measurement, a pyroelectric coefficient of the order of 10(-8)C/cm(2)K was determined in the temperature range of 25 similar to 140 degrees C, comparable to bulk PZT(90/10) ceramics. Under dynamic pyroelectric measurement conditions, using chopped laser radiation, current and voltage response was detected. Thermal-electric conversion studies indicated significant potential for infrared imaging and energy conversion applications for these PZT films.
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页码:623 / 626
页数:4
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