Molecular Doping of Multilayer MoS2 Field-Effect Transistors: Reduction in Sheet and Contact Resistances

被引：228

作者：

Du, Yuchen ^{[1
,2
]}

Liu, Han ^{[1
,2
]}

Neal, Adam T. ^{[1
,2
]}

Si, Mengwei ^{[1
,2
]}

Ye, Peide D. ^{[1
,2
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 10期

基金：

美国国家科学基金会;

关键词：

Contact resistance; doping; MoS2; MOSFET; sheet resistance; threshold voltage; TRANSITION; HOLE;

D O I：

10.1109/LED.2013.2277311

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, polyethyleneimine (PEI) doping on multilayer MoS2 field-effect transistors is investigated. A 2.6 times reduction in sheet resistance and 1.2 times reduction in contact resistance have been achieved. The enhanced electrical characteristics are also reflected in a 70% improvement in ON-current and 50% improvement in extrinsic field-effect mobility. The threshold voltage confirms a negative shift upon the molecular doping. All studies demonstrate the feasibility of PEI molecular doping in MoS2 transistors and its potential applications in layer-structured semiconducting 2-D crystals.

引用

页码：1328 / 1330

页数：3

共 33 条

[1]

Bao W., 2013, APPL PHYS LETT, V102

[2] Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures [J].

Bertolazzi, Simone ;

Krasnozhon, Daria ;

Kis, Andras .

ACS NANO, 2013, 7 (04) :3246-3252

[3]

Chhowalla M, 2013, NAT CHEM, V5, P263, DOI [10.1038/nchem.1589, 10.1038/NCHEM.1589]

[4] Where Does the Current Flow in Two-Dimensional Layered Systems? [J].

Das, Saptarshi ;

Appenzeller, Joerg .

NANO LETTERS, 2013, 13 (07) :3396-3402

[5] High Performance Multilayer MoS2 Transistors with Scandium Contacts [J].

Das, Saptarshi ;

Chen, Hong-Yan ;

Penumatcha, Ashish Verma ;

Appenzeller, Joerg .

NANO LETTERS, 2013, 13 (01) :100-105

[6] Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium [J].

Fang, Hui ;

Tosun, Mahmut ;

Seol, Gyungseon ;

Chang, Ting Chia ;

Takei, Kuniharu ;

Guo, Jing ;

Javey, Ali .

NANO LETTERS, 2013, 13 (05) :1991-1995

[7] Chemical Doping and Electron-Hole Conduction Asymmetry in Graphene Devices [J].

Farmer, Damon B. ;

Golizadeh-Mojarad, Roksana ;

Perebeinos, Vasili ;

Lin, Yu-Ming ;

Tulevski, George S. ;

Tsang, James C. ;

Avouris, Phaedon .

NANO LETTERS, 2009, 9 (01) :388-392

[8] The rise of graphene [J].

Geim, A. K. ;

Novoselov, K. S. .

NATURE MATERIALS, 2007, 6 (03) :183-191

[9] Metal dichalcogenide nanosheets: preparation, properties and applications [J].

Huang, Xiao ;

Zeng, Zhiyuan ;

Zhang, Hua .

CHEMICAL SOCIETY REVIEWS, 2013, 42 (05) :1934-1946

[10] Charge transfer induced polarity switching in carbon nanotube transistors [J].

Klinke, C ;

Chen, J ;

Afzali, A ;

Avouris, P .

NANO LETTERS, 2005, 5 (03) :555-558

← 1 2 3 4 →