Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)

被引：44

作者：

Cordier, Yvon ^{[1
]}

Moreno, Jean-Christophe ^{[1
]}

Baron, Nicolas ^{[1
,2
]}

Frayssinet, Eric ^{[1
]}

Chenot, Sebastien ^{[1
]}

Damilano, Benjamin ^{[1
]}

Semond, Fabrice ^{[1
]}

机构：

[1] CNRS, Ctr Rech Heteroepitaxie & Ses Applicat, F-06560 Valbonne, France

[2] Picogiga Int, F-91971 Courtaboeuf, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 11期

关键词：

AlGaN; GaN; high-electron-mobility transistor (HEMT); Si(110);

D O I：

10.1109/LED.2008.2005211

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The growth of AlGaN/GaN-based heterostructure on Si(110) substrates by molecular beam epitaxy using ammonia as the nitrogen precursor is reported. The structural, optical, and electrical properties of such heterostructure are assessed and are quite similar to the ones obtained on Si(111). A 2-D electron gas is formed at the Al0.3Ga0.7N/GaN interface with a sheet carrier density of 9.6 x 10(12) cm(-2) and a mobility of 1980 cm(2)/V . s at room temperature. Preliminary results concerning high-electron-mobility-transistor static characteristics are presented and compared with that of devices realized on other orientations of silicon.

引用

页码：1187 / 1189

页数：3

共 15 条

[1] Hydrogen termination of Si(110) surfaces upon wet cleaning revealed by highly resolved scanning tunneling microscopy [J].

Arima, K ;

Katoh, J ;

Horie, S ;

Endo, K ;

Ono, T ;

Sugawa, S ;

Akahori, H ;

Teramoto, A ;

Ohmi, T .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (10)

[2] AlGaN/GaN HEMTs on Si(111) with 6.6 W/mm output power density [J].

Behtash, R ;

Tobler, H ;

Neuburger, M ;

Schurr, A ;

Leier, H ;

Cordier, Y ;

Semond, F ;

Natali, F ;

Massies, J .

ELECTRONICS LETTERS, 2003, 39 (07) :626-628

[3]

CORDIER Y, 2008, P S MAT RES SOC SPRI

[4] Epitaxy of GaN on silicon-impact of symmetry and surface reconstruction [J].

Dadgar, A. ;

Schulze, F. ;

Wienecke, M. ;

Gadanecz, A. ;

Blaesing, J. ;

Veit, P. ;

Hempel, T. ;

Diez, A. ;

Christen, J. ;

Krost, A. .

NEW JOURNAL OF PHYSICS, 2007, 9

[5] AlGaN/GaN HEMTs on Si substrate with 7 W/mm output power density at 10 GHz [J].

Dumka, DC ;

Lee, C ;

Tserng, HQ ;

Saunier, P ;

Kumar, M .

ELECTRONICS LETTERS, 2004, 40 (16) :1023-1024

[6] AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy [J].

Joblot, S. ;

Cordier, Y. ;

Semond, F. ;

Chenot, S. ;

Vennegues, P. ;

Tottereau, O. ;

Lorenzini, P. ;

Massies, J. .

SUPERLATTICES AND MICROSTRUCTURES, 2006, 40 (4-6) :295-299

[7] High-electron-mobility AlGaN/GaN heterostructures grown on Si(001) by molecular-beam epitaxy [J].

Joblot, S ;

Semond, F ;

Cordier, Y ;

Lorenzini, P ;

Massies, J .

APPLIED PHYSICS LETTERS, 2005, 87 (13) :1-3

[8] Oceanographic and faunistic structures across an Angola Current intrusion into northern Namibian waters [J].

John, HC ;

Mohrholz, V ;

Lutjeharms, JRE ;

Weeks, S ;

Cloete, R ;

Kreiner, A ;

Neto, DD .

JOURNAL OF MARINE SYSTEMS, 2004, 46 (1-4) :1-22

[9] Buffer free direct growth of GaN on 6H-SiC by metalorganic vapor phase epitaxy [J].

Lahrèche, H ;

Leroux, M ;

Laügt, M ;

Vaille, M ;

Beaumont, B ;

Gibart, P .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :577-583

[10] High microwave and nowse performance of 0.17-μm AlGaN-GaNHEMTs on high-resistivity silicon substrates [J].

Minko, A ;

Hoël, V ;

Lepilliet, S ;

Dambrine, G ;

De Jaeger, JC ;

Cordier, Y ;

Semond, F ;

Natali, F ;

Massies, J .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (04) :167-169

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