Investigation of Sr-Ru-O/Ru multilayer-electrodes prepared by MOCVD

被引：3

作者：

Minamidate, Jun

Nagai, Atsushi

Kuwabara, Hiroki

Funakubo, Hiroshi

Koo, June Mo

Kim, Suk Pil

Park, Youngsoo

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[2] Samsung Adv Inst Technol, Yongin 449712, Gyeonggi Do, South Korea

来源：

INTEGRATED FERROELECTRICS | 2006年 / 81卷

关键词：

MOCVD; three dimensional (3D) ferroelectric capacitor; Ru; SrRuO3;

D O I：

10.1080/10584580600660538

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We proposed tailored metal organic chemical vapor deposition (MOCVD)-SrRuO3/Ru electrode for 3D ferroelectric capacitors to prevent the Ru diffusion to Pb(ZrTi)O-3 [PZT] together with the formation of coherent interfaces with PZT due to the same perovskite structure. The effects of the Sr/(Sr+Ru) ratio on the crystallinity, surface roughness and the electrical properties of PZT films prepared on Sr-Ru-O/Ru bottom electrodes were investigated together with those of Sr-Ru-O layers prepared on Ru. PZT films prepared on Sr-Ru-O layers with the Sr/(Sr+Ru) ratio (x) of x = 0.50 showed the lower leakage current density and the larger remanent polarization than those with x = 0.30 and 0.60.

引用

页码：249 / 260

页数：12