Investigation of Sr-Ru-O/Ru multilayer-electrodes prepared by MOCVD

被引：3
|
作者：
Minamidate, Jun
Nagai, Atsushi
Kuwabara, Hiroki
Funakubo, Hiroshi
Koo, June Mo
Kim, Suk Pil
Park, Youngsoo
机构：
[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[2] Samsung Adv Inst Technol, Yongin 449712, Gyeonggi Do, South Korea
来源：
INTEGRATED FERROELECTRICS | 2006年 / 81卷
关键词：
MOCVD; three dimensional (3D) ferroelectric capacitor; Ru; SrRuO3;
D O I：
10.1080/10584580600660538
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We proposed tailored metal organic chemical vapor deposition (MOCVD)-SrRuO3/Ru electrode for 3D ferroelectric capacitors to prevent the Ru diffusion to Pb(ZrTi)O-3 [PZT] together with the formation of coherent interfaces with PZT due to the same perovskite structure. The effects of the Sr/(Sr+Ru) ratio on the crystallinity, surface roughness and the electrical properties of PZT films prepared on Sr-Ru-O/Ru bottom electrodes were investigated together with those of Sr-Ru-O layers prepared on Ru. PZT films prepared on Sr-Ru-O layers with the Sr/(Sr+Ru) ratio (x) of x = 0.50 showed the lower leakage current density and the larger remanent polarization than those with x = 0.30 and 0.60.
引用
收藏
页码：249 / 260
页数：12
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