Localized growth and in situ integration of nanowires for device applications

被引：29

作者：

Barth, Sven ^{[1
]}

Jimenez-Diaz, Roman ^{[2
]}

Sama, Jordi ^{[2
]}

Prades, Joan Daniel ^{[2
]}

Gracia, Isabel ^{[3
]}

Santander, Joaquin ^{[3
]}

Cane, Carles ^{[3
]}

Romano-Rodriguez, Albert ^{[2
]}

机构：

[1] Inst Mat Chem, A-1060 Vienna, Austria

[2] Univ Barcelona, E-08028 Barcelona, Spain

[3] CSIC, Inst Microelect Barcelona, Bellaterra 08193, Spain

来源：

CHEMICAL COMMUNICATIONS | 2012年 / 48卷 / 39期

关键词：

MECHANISM;

D O I：

10.1039/c2cc30920c

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Simultaneous localized growth and device integration of inorganic nanostructures on heated micromembranes is demonstrated for single crystalline germanium and tin oxide nanowires. Fully operating CO gas sensors prove the potential of the presented approach. With this simple CMOS compatible technique, issues of assembly, transfer and contact formation are addressed.

引用

页码：4734 / 4736

页数：3

共 25 条

[21] SOLUTION-LIQUID-SOLID GROWTH OF CRYSTALLINE III-V SEMICONDUCTORS - AN ANALOGY TO VAPOR-LIQUID-SOLID GROWTH [J].