Semipolar (20(2)over-bar(1)over-bar) InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

被引：310

作者：

Feezell, Daniel F. ^{[1
]}

Speck, James S. ^{[2
]}

DenBaars, Steven P. ^{[2
]}

Nakamura, Shuji ^{[2
]}

机构：

[1] Univ New Mexico, Dept Elect & Comp Engn, Albuquerque, NM 87131 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF DISPLAY TECHNOLOGY | 2013年 / 9卷 / 04期

基金：

美国国家科学基金会;

关键词：

Efficiency droop; gallium nitride; light-emitting diode; nonpolar; semipolar; solid-state lighting; POLARIZATION;

D O I：

10.1109/JDT.2012.2227682

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work examines the effects of polarization-related electric fields on the energy band diagrams, wavelength shift, wave function overlap, and efficiency droop for InGaN quantum wells on various crystal orientations, including polar (0001) (c-plane), semipolar (20 (2) over bar1), semipolar (20 (2) over bar(1) over bar), and non-polar (10 (1) over bar0) (m-plane). Based on simulations, we show that the semipolar (20 (2) over bar(1) over bar) orientation exhibits excellent potential for the development of high-efficiency, low-droop light-emitting diodes (LEDs). We then present recent advancements in crystal growth, optical performance, and thermal performance of semipolar (20 (2) over bar(1) over bar) LEDs. Finally, we demonstrate a low-droop, high-efficiency single-quantum-well blue semipolar (20 (2) over bar(1) over bar) LED with an external quantum efficiency of more than 50% at 100 A/cm(2).

引用

页码：190 / 198

页数：9

共 44 条

[1] Spontaneous polarization and piezoelectric constants of III-V nitrides [J].

Bernardini, F ;

Fiorentini, V ;

Vanderbilt, D .

PHYSICAL REVIEW B, 1997, 56 (16) :10024-10027

[2] Coupled modeling of current spreading, thermal effects and light extraction in III-nitride light-emitting diodes [J].

Bogdanov, M. V. ;

Bulashevich, K. A. ;

Evstratov, I. Yu ;

Zhmakin, A. I. ;

Karpov, S. Yu .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (12)

[3] Simulation of visible and ultra-violet group-III nitride light emitting diodes [J].

Bulashevich, KA ;

Mymrin, VF ;

Karpov, SY ;

Zhmakin, IA ;

Zhmakin, AI .

JOURNAL OF COMPUTATIONAL PHYSICS, 2006, 213 (01) :214-238

[4]

Butte R., 2008, POLARIZATION EFFECTS, P471

[5] Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors [J].

Chichibu, Shigefusa F. ;

Uedono, Akira ;

Onuma, Takeyoshi ;

Haskell, Benjamin A. ;

Chakraborty, Arpan ;

Koyama, Takahiro ;

Fini, Paul T. ;

Keller, Stacia ;

Denbaars, Steven P. ;

Speck, James S. ;

Mishra, Umesh K. ;

Nakamura, Shuji ;

Yamaguchi, Shigeo ;

Kamiyama, Satoshi ;

Amano, Hiroshi ;

Akasaki, Isamu ;

Han, Jung ;

Sota, Takayuki .

NATURE MATERIALS, 2006, 5 (10) :810-816

[6]

Coldren L. A., 2012, DIODE LASERS PHOTONI, P158

[7]

David A., 2008, APPL PHYS LETT, V92

[8]

David A., 2010, APPL PHYS LETT, V97

[9]

David A., 2010, APPL PHYS LETT, V96

[10] Green light emitting diodes on a-plane GaN bulk substrates [J].

Detchprohm, Theeradetch ;

Zhu, Mingwei ;

Li, Yufeng ;

Xia, Yong ;

Wetzel, Christian ;

Preble, Edward A. ;

Liu, Lianghong ;

Paskova, Tanya ;

Hanser, Drew .

APPLIED PHYSICS LETTERS, 2008, 92 (24)

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